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Thermal and electrical stability of gamma-ray induced defects in germanium

 

作者: S.J. Pearton,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 61, issue 3-4  

页码: 135-141

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208229925

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Data are presented on the long-term room temperature stability of γ-Ray induced defects in Ge and the response of these centres to thermal annealing. Carrier capture models involving excited states for donor and acceptor centres are also discussed.

 

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