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Fabrication of quantum wires in GaAs/AlGaAs heterolayers

 

作者: S. Thoms,   I. McIntyre,   S. P. Beaumont,   M. Al‐Mudares,   R. Cheung,   C. D. W. Wilkinson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 1  

页码: 127-130

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584028

 

出版商: American Vacuum Society

 

关键词: ETCHING;FABRICATION;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;WIRES;HETEROJUNCTIONS;ELECTRON GAS;CHARGED−PARTICLE TRANSPORT;QUANTUM WELL STRUCTURES;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

Conducting wires of widths down to 0.1 μm have been fabricated in modulation‐doped GaAs/AlGaAs material using SiCl4reactive ion etching with a negative resist mask. The resist used was high‐resolution negative (HNR) and its applicability to microstructure fabrication is discussed. A novel dry etch for GaAs, CH4/H2reactive ion etching, produces low damage and shows much promise for wire fabrication.

 

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