Carbon ions have been implanted intop-type silicon at energies in the range 1.5–4.3 MeV in order to examine the doping effects of the damage. Carbon was chosen since it does not produce impurity doping and hence damage effects alone could be observed. Capacitance-voltage doping profiles showed that initially two p-type doping peaks were produced. On annealing to 400°C thep-type activity increased, then disappeared completely after a 700°C anneal. The deeper peak disappeared at a lower annealing temperature.