Hydrogen desorption in SiGe films: A diffusion limited process
作者:
J. Vizoso,
F. Marti´n,
J. Sun˜e´,
M. Nafri´a,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 24
页码: 3287-3289
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118429
出版商: AIP
数据来源: AIP
摘要:
A model to explain the hydrogen desorption kinetics in SiGe alloys is presented. This is an extension of a previous desorption model of hydrogen from Si, that considers the presence of three dimer types in the surface in which hydrogen atoms tend to pair before the desorption reaction. Surface diffusion is included in the model. The comparison with experimental results shows that desorption is a diffusion limited process. ©1997 American Institute of Physics.
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