130 GHz GaAs monolithic integrated circuit sampling head
作者:
R. A. Marsland,
V. Valdivia,
C. J. Madden,
M. J. W. Rodwell,
D. M. Bloom,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 6
页码: 592-594
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101842
出版商: AIP
数据来源: AIP
摘要:
We have fabricated a GaAs diode sampling head which has a bandwidth of 130 GHz, which is a five times improvement over previous room‐temperature designs. This speed is attained with a monolithic sampling head design integrated with two nonlinear transmission lines which serve as the strobe pulse and test signal generators. A 4 ps transition time has been measured with the sampler. We have also measured sinusoidal waveforms to 120 GHz.
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