Origin of conductivity and low-frequency noise in reverse-biased GaNp-njunction
作者:
D. V. Kuksenkov,
H. Temkin,
A. Osinsky,
R. Gaska,
M. A. Khan,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 11
页码: 1365-1367
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121056
出版商: AIP
数据来源: AIP
摘要:
We study the origins of conductivity and low-frequency noise in GaNp-njunctions under reverse bias. Carrier hopping through defect states in the space charge region is identified as the main mechanism responsible for low bias conductivity. Threading dislocations appear the most likely source of such defect states. At higher bias hopping is supplemented with Poole–Frenkel emission. A relatively high level of1/f-like noise is observed in the diode current. The bias and temperature dependencies of the noise current are investigated.©1998 American Institute of Physics.
点击下载:
PDF
(79KB)
返 回