GaP1−xNxalloys (x=0.02–0.07 andx&bartil;0.99) have been formed by ion implantation of Ga+and N+into GaP. X‐ray diffraction measurements proved that both a wurtzite structure and a zincblende structure of the crystals have been formed within the implanted layers. They are similar to but not the same as GaN and GaP, respectively. An emission band at an energy higher than the energy gap of GaP appeared on the photoluminescence (PL) spectra of the implanted layers and consists of several components. Formation of the alloy and origins of the PL components are discussed. ©1995 American Institute of Physics.