Successful growth of a cubicIn0.17Ga0.83N/GaNstructure exhibiting blue luminescence at temperatures up to 500 K is reported. Atomic force microscopy and x-ray diffraction are used to analyze the morphological and crystalline properties of the sample. Photoluminescence measurements reveal broad, but well defined emission with a maximum at 440–450 nm in the temperature range of 5–500 K. A line-shape analysis of the spectra, as well as measurements of the absorption coefficient, allow an estimation of the band-gap energy of the cubicIn0.17Ga0.83Nepilayer. ©1997 American Institute of Physics.