A novel processing method is developed for preparing sol-gel derivedPb(Zr1−xTix)O3(x=0.47)thin films onPt/Ti/SiO2/Sisubstrates. Using a modified precursor solution and a rapid heat treatment without pyrolysis, it was possible to obtain highly (111) oriented PZT thin films with high perovskite content at a low annealing temperature of 550 °C. The low temperature processing was assisted by taking advantage of the heterogeneous nucleation of the PZT films, which reduces the activation energy for perovskite phase formation. Using this method, the PZT thin films exhibited better dielectric and ferroelectric properties at 550 °C than those reported by other methods. For example, the PZT films annealed at 550 °C showed a well-saturated hysteresis loop at an applied voltage of 5 V withPrandEcof12 &mgr;C/cm2and 38 kV/cm, and their dielectric constant and dissipation factor at a frequency of 100 kHz were 410 and 0.021, respectively. The leakage current density was lower than10−8at an applied electric field of 150 kV/cm. ©1998 American Institute of Physics.