Observation of exciton states in GaAs coupled quantum wires on a V-grooved substrate
作者:
Kazuhiro Komori,
Xue-Lun Wang,
Mutsuo Ogura,
Hirofumi Matsuhata,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 23
页码: 3350-3352
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120334
出版商: AIP
数据来源: AIP
摘要:
The exciton states of GaAs coupled quantum wires are investigated by the measurement of photoluminescence excitation (PLE) in comparison with those of single quantum wires. In the PLE spectra of single quantum wires (wirethickness=4.5 nm), sharp exciton peaks of the first two heavy hole-like transitions are observed with large energy difference of 47 meV, while two adjacent exciton peaks with the small energy splitting of 24 meV are observed in the coupled quantum wires (wirethickness=5 nm,barrierthickness=3 nm). From the measurements of the barrier thickness dependence, these exciton states agree well with the coupled states of the quantum wires calculated by the finite element method. ©1997 American Institute of Physics.
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