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Observation of exciton states in GaAs coupled quantum wires on a V-grooved substrate

 

作者: Kazuhiro Komori,   Xue-Lun Wang,   Mutsuo Ogura,   Hirofumi Matsuhata,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 23  

页码: 3350-3352

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120334

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The exciton states of GaAs coupled quantum wires are investigated by the measurement of photoluminescence excitation (PLE) in comparison with those of single quantum wires. In the PLE spectra of single quantum wires (wirethickness=4.5 nm), sharp exciton peaks of the first two heavy hole-like transitions are observed with large energy difference of 47 meV, while two adjacent exciton peaks with the small energy splitting of 24 meV are observed in the coupled quantum wires (wirethickness=5 nm,barrierthickness=3 nm). From the measurements of the barrier thickness dependence, these exciton states agree well with the coupled states of the quantum wires calculated by the finite element method. ©1997 American Institute of Physics.

 

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