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Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two‐step metalorganic chemical vapor deposition

 

作者: D. F. Welch,   P. S. Cross,   D. R. Scifres,   W. Streifer,   R. D. Burnham,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 48, issue 25  

页码: 1716-1718

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97024

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High quality buried heterostructure (BH) lasers were grown by a two‐step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2‐&mgr;m stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10‐stripe array.

 

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