Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two‐step metalorganic chemical vapor deposition
作者:
D. F. Welch,
P. S. Cross,
D. R. Scifres,
W. Streifer,
R. D. Burnham,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 25
页码: 1716-1718
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97024
出版商: AIP
数据来源: AIP
摘要:
High quality buried heterostructure (BH) lasers were grown by a two‐step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2‐&mgr;m stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10‐stripe array.
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