Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride
作者:
D. Field,
D. F. Klemperer,
I. T. Wade,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 2
页码: 551-558
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584398
出版商: American Vacuum Society
关键词: SILICON NITRIDES;ETCHING;ION COLLISIONS;CARBON FLUORIDES;OXYGEN MOLECULES;MASS SPECTROSCOPY;FLUORESCENCE SPECTROSCOPY;METASTABLE STATES;MOLECULAR IONS;COLLISIONS;Si2N4
数据来源: AIP
摘要:
Basic chemical processes involved in etching of silicon nitride with a CF4/O2radio frequency plasma have been investigated using optical emission spectroscopy. Spectra have been recorded in the range 2400–7050 Å and comparison has been made of the intensity of more than 60 atomic and molecular lines in the presence and absence of silicon nitride coated wafers. We identify a number of species as important etching agents including metastable F(4P), CF2, and metastable F+(1D,1S). Our results are consistent with the principle of spin conservation in surface reactions set out in earlier work on Si(100). Our conclusions extend and broadly confirm the results of a previous mass spectrometric study of the same system.
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