Silicon Carbide Light‐Emitting Diodes
作者:
Ralph M. Potter,
John M. Blank,
Arrigo Addamiano,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 5
页码: 2253-2257
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657967
出版商: AIP
数据来源: AIP
摘要:
Electroluminescent diodes were prepared by the simultaneous diffusion of boron and aluminum at 2150° to 2250°C into nitrogen‐doped,n‐type 6HSiC crystals. These diodes exhibit a typical brightness of 50 ft·L (170 nit) at a current density of 5 A/cm2for temperatures of 25° to above 200°C. The results of various measurements on these diodes are presented and the anomalous nature of the diffusion is discussed.
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