Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport
作者:
Leonard F. Register,
Karl Hess,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 9
页码: 1222-1224
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119857
出版商: AIP
数据来源: AIP
摘要:
The effects of lost phase coherence on carrier capture by semiconductor quantum wells are simulated using Schro¨dinger Equation Monte Carlo. Results are shown for polar-opticalphonon-induced capture of both electrons and holes, and for both monoenergetic and thermal distributions of incident charge carriers. Results suggest that semiclassical modeling of hole capture may be sufficient, provided that quantum mechanical reflection from the individual heterointerfaces still is taken into account. However, for a quantum well laser optimized to operate at an electron capture resonance, semiclassical calculations blind to the resonance structure would underestimate the capture rate, whileGolden-Rulecalculations, which assume complete phase coherence, could somewhat overestimate it. ©1997 American Institute of Physics.
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