Structural and dielectric properties of Ba0.5Sr0.5TiO3thin films with an epi-RuO2bottom electrode
作者:
Q.X. Jia,
A.T. Findikoiglu,
R. Zhou,
S.R. Foltyn,
X.D. Wu,
J.L. Smith,
Q. Wang,
D.F. Evans,
W.L. Gladfelter,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1998)
卷期:
Volume 19,
issue 1-4
页码: 111-119
ISSN:1058-4587
年代: 1998
DOI:10.1080/10584589808012698
出版商: Taylor & Francis Group
关键词: DRAMs;BSTO;thin film
数据来源: Taylor
摘要:
Epitaxial conductive RuO2thin films were used as bottom electrodes of Ba0.5Sr0.5TiO3(BSTO) thin-film capacitors. The BSTO showed pure (111) orientation normal to the substrate surface when grown on (200) oriented epi-RuO2on LaAlO3. The BSTO film consisted of a main body of stoichiometric bulk layer and a slightly oxygen deficiency region on the very film surface as revealed by Rutherford backscattering spectrometry. The dielectric constant of BSTO was above 400 at 10 kHz with zero dc electric field bias. A bias dc electric field modulation of the dielectric constant was observed to be more than 80% at 100 kHz at a field intensity of 6 × 105V/cm.
点击下载:
PDF (390KB)
返 回