Submicron, vacuum ultraviolet contact lithography with an F2excimer laser
作者:
J. C. White,
H. G. Craighead,
R. E. Howard,
L. D. Jackel,
R. E. Behringer,
R. W. Epworth,
D. Henderson,
J. E. Sweeney,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 1
页码: 22-24
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94589
出版商: AIP
数据来源: AIP
摘要:
An F2excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography. At this short wavelength, conventional glass and quartz mask substrates are opaque, and therefore alkaline‐earth halides and sapphire were used as mask substrates. The masks were patterned by electron beam lithography, and mask features as narrow as 150 nm have been replicated and represent the smallest features yet produced by contact photolithography.
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