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Submicron, vacuum ultraviolet contact lithography with an F2excimer laser

 

作者: J. C. White,   H. G. Craighead,   R. E. Howard,   L. D. Jackel,   R. E. Behringer,   R. W. Epworth,   D. Henderson,   J. E. Sweeney,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 1  

页码: 22-24

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94589

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An F2excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography. At this short wavelength, conventional glass and quartz mask substrates are opaque, and therefore alkaline‐earth halides and sapphire were used as mask substrates. The masks were patterned by electron beam lithography, and mask features as narrow as 150 nm have been replicated and represent the smallest features yet produced by contact photolithography.

 

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