A method of obtaining unsupported single‐crystal films of Ge has been developed which involves the sublimation of a NaCl substrate from the Ge film after vacuum deposition. This allows compatibility of the film and NaCl substrate previously thought impossible due to the large difference in their coefficients of thermal expansion.Evaluation of this endeavor has been made with microscopic, x‐ray diffraction, and electron diffraction examinations. This evaluation has disclosed that the films are (100) oriented monocrystalline films which contain, in varying amounts, surface contaminants consisting of NaCl, BaCl2, Ta2O5, TaC, and amorphous C.