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Oxidation resistant sol‐gel derived silicon oxynitride thin films

 

作者: Richard K. Brow,   Carlo G. Pantano,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 1  

页码: 27-29

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96750

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Silicon oxynitride films, made by reacting porous, sol‐gel derived silicon dioxide with ammonia, were oxidized in dry O2between 800 and 1000 °C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

 

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