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Submicrometer patterning by projected excimer‐laser‐beam induced chemistry

 

作者: D. J. Ehrlich,   J. Y. Tsao,   C. O. Bozler,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1985)
卷期: Volume 3, issue 1  

页码: 1-8

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583226

 

出版商: American Vacuum Society

 

关键词: EXCIMER LASERS;IMAGES;THIN FILMS;PHOTORESISTS;ETCHING;MASKING;CHEMICAL REACTIONS;ORGANIC POLYMERS;CRYSTAL DOPING;FABRICATION;ULTRAVIOLET RADIATION;SURFACE REACTIONS;PHOTOCHEMISTRY;LITHOGRAPHY;SILICA;SILICON;ALUMINIUM;OXYGEN;MICROELECTRONICS;Si(B);SiO2;AlO

 

数据来源: AIP

 

摘要:

Projection imaging with the deep‐UV (193 nm) and vacuum ultraviolet (VUV) (157 nm) output of an excimer laser has been applied to submicrometer patterning of thin films by injected‐defect, surface‐chemical, and solid‐transformation processing. The methods have been designed to take advantage of the short‐wavelength, high‐peak‐intensity pulsed radiation from these sources. Examples are described of pattern definition by exposure of multilayer organic resists, by maskless etching and doping of solids in reactive vapors, and by solid‐state chemical transformations in inorganic Al/O films. Well‐resolved 0.4‐μm lines and spaces have been achieved. Required doses, between 0.04 and 1 J/cm2, are compatible with single‐ or multipulse step‐and‐repeat projection patterning with a small excimer laser.

 

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