Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation
作者:
L. D. Lanzerotti,
J. C. Sturm,
E. Stach,
R. Hull,
T. Buyuklimanli,
C. Magee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 23
页码: 3125-3127
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119110
出版商: AIP
数据来源: AIP
摘要:
In this work, we demonstrate that the incorporation of carbon in the base of anpnSi/SiGe/Si heterojunction bipolar transistor dramatically reduces the outdiffusion of boron from the base under postgrowth implantation and annealing procedures. Without the addition of C, these processes would lead to transistors with vastly degraded transistor characteristics. This reduction in B diffusion, when compared to devices without C, has been observed by both secondary ion mass spectroscopy and improved electrical characteristics. ©1997 American Institute of Physics.
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