Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses
作者:
J. M. Liu,
R. Yen,
H. Kurz,
N. Bloembergen,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 9
页码: 755-757
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92843
出版商: AIP
数据来源: AIP
摘要:
Ultrafast melting and resolidification on a (111) sufarce of a silicon crystal wafer, induced by 20‐ps pulses at 532‐nm wavelength, is accompanied by the emission of charged particles. This emission is studied as a function of pulse energy, in combination with time‐resolved reflectivity changes and post‐annealing morphology. The data provide evidence that thermalization time for a dense carrier plasma and the lattice is shorter than 10−11s.
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