The local distortion in the indium‐doped semi‐insulating GaAs has been evaluated by means of ion channeling experiments along three directions for various indium concentrations up to 6.3×1020/cm3. The local distortion due to the indium doping gradually increases with the indium concentration, accompanied by the increase in minimum yield along the ⟨100⟩, ⟨110⟩, and ⟨111⟩ axes. The increase of the local distortion is independent of the crystal growth method.