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Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions

 

作者: H. C. Card,   E. S. Yang,   P. Panayotatos,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 12  

页码: 643-645

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89269

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The dark currents in Al‐nSi Schottky‐barrier solar cells are appreciably reduced by low‐temperature heat treatments (T<577 °C) which induce metallurgical reactions between the Al and Si. Open‐circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.

 

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