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Thermoelectric Power and Electrical Resistivity of Dilute Alloys of Silicon in Copper, ...
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Thermoelectric Power and Electrical Resistivity of Dilute Alloys of Silicon in Copper, Nickel, and Iron
作者:
C. A. Domenicali,
F. A. Otter,
期刊:
Journal of Applied Physics
(AIP Available online 1955)
卷期:
Volume 26,
issue 4
页码: 377-380
ISSN:0021-8979
年代: 1955
DOI:10.1063/1.1722001
出版商: AIP
数据来源: AIP
摘要:
Data are given on the thermoelectric power and on the resistivity of the dilute alloys, Cu&sngbnd;Si, Ni&sngbnd;Si, and Fe&sngbnd;Si, from −195° to +500°C (and higher for some of the alloys). The Cu&sngbnd;Si thermopower at first decreases with increasing Si content and then again increases, the minimum being at about 2 or 3 atomic percent Si, depending on the temperature. The Cu&sngbnd;Si resistivity is typical of Cu‐base alloys, the resistivity increases per atomic percent Si changing from 7.2 &mgr;&OHgr; cm at −190°C to 8.7 &mgr;&OHgr; cm at 840°C. The thermopower and resistivity curves for Ni&sngbnd;Si show a characteristic knick at the Curie temperature of each alloy. The Fe&sngbnd;Si thermopowers are positive at lower temperatures and become negative at a temperatureT0which decreases with increasing Si content. Furthermore,T0changes from about 300°C for pure iron to about +70°C for 2 atomic percent Si. The resistivity of Fe&sngbnd;Si alloys increases faster than linearly with temperature, and this is also the case for the Ni&sngbnd;Si alloys below the Curie temperature. Above the Curie temperature, the Ni&sngbnd;Si resistivities vary linearly with temperature. The increase in resistivity per atomic percent Si in Fe is 10.5 &mgr;&OHgr; cm at all temperatures within the measured range.
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