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Band‐gap narrowing in novel III‐V semiconductors

 

作者: S. C. Jain,   J. M. McGregor,   D. J. Roulston,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 7  

页码: 3747-3749

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346291

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A predictive model for band‐gap narrowing has been applied to several III‐V semiconductors. Band‐gap narrowing is expressed as &Dgr;Eg=AN1/3+BN1/4+CN1/2; values forA,B, andCare predicted for these materials. The commonly usedN1/3relation is shown to be valid for thep‐type materials considered, but not forn‐type materials.

 

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