Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices
作者:
CarlL. Gardner,
Christain Ringhofer,
期刊:
Transport Theory and Statistical Physics
(Taylor Available online 2000)
卷期:
Volume 29,
issue 3-5
页码: 563-570
ISSN:0041-1450
年代: 2000
DOI:10.1080/00411450008205892
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The “smooth” quantum hydrodynamic (QHD) model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode exhibit negative differential resistance—the experimental signal for quantum resonance effects. Resonant tunneling is analyzed in fluid dynamical terms from the point of view of the smooth QHD transport equations.
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