Isochronal annealing experiments on defects produced by 1.5 MeV electron irradiation at room temperature have been performed onn‐type SiGe alloys. Two defects have been studied, labeled P1 and P2, with associated energy levels located atEC−0.32 eV andEC−0.49 eV, respectively, and capture cross sections equal to 1×10−15cm2and 2×10−15cm2. P1 anneals out at 560 K and P2 at 470 K. A comparison with the defects known in Si and Ge allows us to propose the following identification: P1 is associated with the 0/− charge state of the divacancy (V–V)Siand P2 is associated with the 0/− charge state of theEcenter (P–VSi). ©1995 American Institute of Physics.