Admittance spectroscopy of deep levels in Hg1−xCdxTe
作者:
D. L. Polla,
C. E. Jones,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 12
页码: 6233-6237
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327608
出版商: AIP
数据来源: AIP
摘要:
We report the application of diode admittance spectroscopy in characterizing traps in Hg1−xCdxTe. Measurements performed onn+‐pjunction photodiodes have identified a hole trap located 0.16 eV above the valence band inx=0.305 liquid‐phase‐epitaxy‐grown material and a single hole trap located 0.046 eV above the valence band inx=0.219 bulk‐grown material. Measurements of trap density and majority‐carrier capture cross section have also been carried out, with results suggesting hole capture at a neutral trapping center. Trap energies determined by the admittance spectroscopy technique were found to be in good agreement with lifetime‐versus‐temperature data analyzed in terms of a single Shockley‐Read recombination center.
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