Formation of outgrowths at the initial growing stage of YBa2Cu3Oxultrathin films on ZrO2substrates
作者:
J. Gao,
W. H. Wong,
J. Xhie,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 15
页码: 2232-2234
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115113
出版商: AIP
数据来源: AIP
摘要:
Ultrathin films of YBa2Cu3Oxwith good crystallinity and superconductivity were prepared by a modified off‐axis sputtering. The microstructure, with emphasis on surface morphology and formation of outgrowths, was studied by using atomic force microscopy and electron microscopy. It was found that many outgrowths were formed at the initial growing stage. Therefore it is important to suppress the nucleation of outgrowths at a very early growing step to obtain a smooth film. The nucleation of outgrowths is significantly influenced by surface defects on the substrate. Discussion is also made in correlation with the occurrence of an intermediate layer commonly observed onZrO2. From our observation, YBa2Cu3Oxmight be grown directly on the surface of ZrO2without forming any intermediate layer, if the film thickness is very small. ©1995 American Institute of Physics.
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