Two quite different models have indicated their ability to describe the experimental data for the kinetics of light‐induced defect creation in hydrogenated amorphous silicon at or quite near room temperature. These have been called the ‘‘t1/3’’ model and the ‘‘stretched exponential’’ model. When measurements are made at different temperatures, however, the experimental data can still be described completely by the stretched exponential model with a change in the value of the stretch parameter, which may reasonably be a function of temperature, but they no longer follow at1/3dependence. Since thet1/3dependence is based on a particular physical mechanism for defect creation, it is concluded that this mechanism is not applicable to hydrogenated amorphous silicon.