A high‐resolution transmission electron microscopy study of the solid phase crystallization of amorphous silicon thin films deposited on SiO2at 520 °C by low pressure chemical vapor deposition and annealed at 550 °C in a dry N2ambient was carried out so that the grain growth mechanism, various types of defects, and the origins of defect formation could be understood on an atomic level. Silicon crystallites formed at the initial stage of the crystallization had a circular shape and grains had a branched elliptical or a dendritic shape. Many twins, of which {111} coherent boundaries were parallel to the long axis of a grain, were observed in the interior of all the elongated grains. In addition to twins, the following defects were observed in the grain: intrinsic stacking faults, extrinsic stacking faults, perfect dislocations, extended screw dislocations, and Shockley partial dislocations. These defects were formed by the following reasons: errors in the stacking sequence at the amorphous/crystalline interface; jumps of a twin plane; the intersecting of two crystal growth fronts slightly misoriented; and the intersecting of two twin planes at the amorphous/crystalline interface. Among those defects, twins and stacking faults provided a preferable nucleation site for an atomic step of a {111} plane. As a result, it was concluded that grain growth in the ⟨112⟩ direction along the {111} plane parallel to the long axis of a grain was accelerated by twins and stacking faults. ©1995 American Institute of Physics.