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Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds

 

作者: I. Abbati,   G. Rossi,   L. Braicovich,   I. Lindau,   W. E. Spicer,   B. De Michelis,  

 

期刊: Journal of Applied Physics  （AIP Available online 1981）
卷期: Volume 52, issue 11  

页码: 6994-6996

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.328665

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thermally induced Si accumulation onto Pd2Si surfaces has been studied for the first time with synchrotron radiation photoemission. Evidence is given of the formation of strong bonds between Si and Pd in the transition region between Pd2Si and Si. The results are discussed in view of the Pd‐Si interfaces prepared by annealing in device technology.

 

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