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Three‐bond scission and the structure of the cleaved Si(111) surface

 

作者: D. Haneman,   M. G. Lagally,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1451-1456

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584239

 

出版商: American Vacuum Society

 

关键词: CLEAVAGE;SURFACE STRUCTURE;MATHEMATICAL MODELS;SILICON;CHEMICAL BONDS;Si

 

数据来源: AIP

 

摘要:

It is proposed that cleavage of Si to form Si(111) (2×1) occurs by the scission of three bonds between the closely spaced double layers, rather than by the severing of the single bond that connects the double layers. It is shown that three‐bond scission occurs in the behavior of dislocations in Si. Models of the surface structure based on this cleavage process are presented and discussed in light of the current understanding of this surface.

 

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