Mechanisms of optical gain in cubic gallium nitrite
作者:
J. Holst,
L. Eckey,
A. Hoffmann,
I. Broser,
B. Scho¨ttker,
D. J. As,
D. Schikora,
K. Lischka,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 12
页码: 1439-1441
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120588
出版商: AIP
数据来源: AIP
摘要:
We report on the mechanisms of optical gain in cubic GaN. Intensity-dependent gain spectra allow a distinction of the processes involved in providing optical amplification. For moderate excitation levels, the biexciton decay is responsible for a gain structure at 3.265 eV. With increasing excitation densities, gain is observed on the high energy side of the cubic band gap due to band filling processes. For the highest pump intensities, the electron-hole plasma is the dominant gain process. Gain values up to210 cm−1were obtained, indicating the high potential of cubic GaN for device applications. The observed gain mechanisms are similar to those of hexagonal GaN. ©1998 American Institute of Physics.
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