Quantitative Measurement of Semiconductor Homogeneity from Plasma Edge
作者:
David F. Edwards,
Paul D. Maker,
期刊:
Journal of Applied Physics
(AIP Available online 1962)
卷期:
Volume 33,
issue 8
页码: 2466-2468
ISSN:0021-8979
年代: 1962
DOI:10.1063/1.1728995
出版商: AIP
数据来源: AIP
摘要:
The carrier concentration homogeneity in a semiconductor can be quantitatively measured from the position of the plasma edge. This has been demonstrated for an InAs sample for which changes of homogeneity of about 0.5% have been measured. This plasma edge method for measuring carrier concentration inhomogeneities is at least an order of magnitude more sentitive than other methods reported to date and can be applied for any semiconductor that has a well‐defined plasma edge.
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