Disorder‐activated modes in Raman spectra of Al0.3Ga0.7As encapsulated with Si3N4films
作者:
T. Kamijoh,
A. Hashimoto,
H. Takano,
M. Sakuta,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 11
页码: 1084-1085
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94652
出版商: AIP
数据来源: AIP
摘要:
Raman spectra of single crystal Al0.3Ga0.7As encapsulated with Si3N4have been measured. The encapsulation is observed to alter certain low‐frequency spectral features below 250 cm−1associated with the disorder‐activated mode. The enhancement of the disorder‐activated mode intensities is attributed to the breakdown of symmetry selection rules by the strain field induced by the dielectric overlayer.
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