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Ultra‐shallow depth profiling with time‐of‐flight secondary ion mass spectrometry

 

作者: J. Bennett,   J. A. Dagata,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 214-218

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587143

 

出版商: American Vacuum Society

 

关键词: SIMS;TIME−OF−FLIGHT MASS SPECTROMETERS;GALLIUM ARSENIDES;BINARY COMPOUNDS;DOPING PROFILES;PASSIVATION;SURFACE ANALYSIS;ETCHING;SENSITIVITY;PHOSPHORUS SULFIDES;GaAs

 

数据来源: AIP

 

摘要:

Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF‐SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF‐SIMS ultra‐shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5solutions and oxidized by exposure to an UV/ozone treatment.

 

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