Integration of sol-gel derived PZT with sos technology
作者:
JasvinderSingh Obhi,
TraceyA. Bland,
Anil Patel,
PaulB. Kirby,
John Kerr,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 10,
issue 1-4
页码: 165-180
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012274
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
PZT thin films up to 3000Å have been grown via a sol-gel route onto metallized sapphire substrates. Sharp X-ray peaks of perovskite indicating mixed or highly (111) oriented PZT were obtained and a link made to the thermal processing applied. Ferroelectric properties of these samples are discussed in light of development of a 4 kbit NVRAM demonstrator on SOS, which is also introduced. The relative merits of these properties along with endurance measurements are discussed with particular emphasis on the implications for complete integration with conventional SOS-based technology, in the context of non-volatile memory applications.
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