首页   按字顺浏览 期刊浏览 卷期浏览 Extended function of a high‐Tctransition edge bolometer on a micromachined Si me...
Extended function of a high‐Tctransition edge bolometer on a micromachined Si membrane

 

作者: H. Neff,   J. Laukemper,   G. Hefle,   M. Burnus,   T. Heidenblut,   W. Michalke,   E. Steinbeiss,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 13  

页码: 1917-1919

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114567

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The bolometric performance of a high‐Tctransition edge bolometer has been evaluated within the temperature range 80 K<T<300 K. The detectivityD* of the device is peaking at transition midpoint and remains at moderate levels up to room temperature. The bolometric time constant of the device increases from 0.33 ms at transition midpoint to 1.55 ms at ambient temperature. The noise pattern displays 1/f behavior at low frequency and is scaling with bias current and the thermal resistance coefficient &bgr; of the superconducting film. ©1995 American Institute of Physics.

 

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