Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures
作者:
O. Y. Raisky,
W. B. Wang,
R. R. Alfano,
C. L. Reynolds, Jr.,
V. Swaminathan,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 1
页码: 394-399
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364070
出版商: AIP
数据来源: AIP
摘要:
Multiple quantum well InGaAsP/InPp-i-nlaser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time. ©1997 American Institute of Physics.
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