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Gain spectroscopy on InGaN/GaN quantum well diodes

 

作者: M. Kuball,   E.-S. Jeon,   Y.-K. Song,   A. V. Nurmikko,   P. Kozodoy,   A. Abare,   S. Keller,   L. A. Coldren,   U. K. Mishra,   S. P. DenBaars,   D. A. Steigerwald,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 19  

页码: 2580-2582

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118925

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection(>kA/cm2).The spectral characteristics suggest that the electronic states responsible for blue laser action in this material are strongly influenced by the presence of microscopic crystalline disorder. ©1997 American Institute of Physics. 

 

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