The first successful substitutional doping of dilute magnetic semiconductor superlattices composed of alternating layers of CdMnTe and CdTe is reported. Thesen‐type In‐doped multilayer structures were prepared using a new thin‐film growth technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated with visible light during the deposition process. The electrical, optical, and structural properties of the CdMnTe‐CdTe superlattices are discussed.