High density ferroelectric memories: Materials, processing and scaling
作者:
S. Aggarwal,
C. Ganpule,
I.G. Jenkins,
B. Nagaraj,
A. Stanishevsky,
J. Melngailis,
E. Williams,
R. Ramesh,
期刊:
Integrated Ferroelectrics
(Taylor Available online 2000)
卷期:
Volume 28,
issue 1-4
页码: 213-225
ISSN:1058-4587
年代: 2000
DOI:10.1080/10584580008222233
出版商: Taylor & Francis Group
关键词: diffusion barriers;ferroelectric;oxide electrodes
数据来源: Taylor
摘要:
A review is presented of approaches to integrate thin film Pb(Zr, Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor.
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