High Schottky barrier height of &fgr;b=0.77 eV for Al/n‐Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post‐annealing. Previously, this high barrier height was only observable in the vacuum cleaved or sputter‐etched samples in an ultrahigh vacuum condition. The Schottky barrier height was reduced if a partially ionized jet beam with 0.1% ions was used in the deposition process and if a bias of ≥0.5 kV was applied to the substrate. The reduction of the Schottky barrier height is attributed to the surface damage caused by the energetic ion bombardment. It is shown that a high barrier height (&bartil;0.8 eV) and a low leakage current were retained after a relatively low‐temperature (&bartil;450 °C) annealing process if the applied bias was ≤1 kV.