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Photoreflectance study of Fermi level changes in photowashed GaAs

 

作者: H. Shen,   Fred H. Pollak,   J. M. Woodall,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 3  

页码: 413-415

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.585036

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;FERMI LEVEL;SURFACE POTENTIAL;SURFACE CLEANING;PHOTOCHEMICAL REACTIONS;CARRIER DENSITY;GaAs

 

数据来源: AIP

 

摘要:

As a result of the photowashing of (100)n‐GaAs (n≊3×1016cm−3) a decrease of about 25% in the surface potential was found using the contactless electromodulation method of photoreflectance. This corresponds to a reduction in the surface state density by about a factor of 2.

 

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