首页   按字顺浏览 期刊浏览 卷期浏览 Normal incidence intersubband absorption in vertical quantum wells
Normal incidence intersubband absorption in vertical quantum wells

 

作者: V. Berger,   G. Vermeire,   P. Demeester,   C. Weisbuch,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 2  

页码: 218-220

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113139

 

出版商: AIP

 

数据来源: AIP

 

摘要:

N‐doped vertical AlGaAs quantum wells have been fabricated by metalorganic vapor phase epitaxial growth of a single‐doped AlGaAs layer on a submicron grating. Intersubband absorption at normal incidence is demonstrated in those quantum wells. This opens new possibilities for infrared quantum well devices using intersubband transitions. ©1995 American Institute of Physics.

 

点击下载:  PDF (154KB)



返 回