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1.3‐&mgr;m InGaAsP continuous‐wave lasers vapor grown on (311) and (511) InP substrates

 

作者: G. H. Olsen,   T. J. Zamerowski,   N. J. DiGiuseppe,  

 

期刊: Journal of Applied Physics  （AIP Available online 1983）
卷期: Volume 54, issue 6  

页码: 3598-3599

 

ISSN:0021-8979

 

年代: 1983

 

DOI:10.1063/1.332430

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Continuous‐wave (cw) lasing behavior has been observed with 1.3‐&mgr;m InGaAsP lasers grown on (311) and (511) InP substrates. Threshold current densities of (311) devices were 30% lower than those on comparable (100) devices (1000 vs 1300 A/cm2). The photoluminescence intensity fromp+–InGaAsP ‘‘cap’’ layers is more than an order of magnitude greater than on (100) devices.

 

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