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Electrical and optical evidence of resonant tunneling of holes in ann+in+double‐barrier diode structure under illumination

 

作者: N. Vodjdani,   D. Coˆte,   D. Thomas,   B. Sermage,   P. Bois,   E. Costard,   J. Nagle,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 1  

页码: 33-35

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102638

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using low‐temperature photocurrent, steady‐state and time‐resolved photoluminescence, we have shown the importance of hole transport in the optical properties ofn+in+double‐barrier diodes under operation. We have also seen evidence of resonant tunneling of minority holes in such an illuminated double‐barrier diode.

 

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