The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops inNH3results in an injection of vacancies, which enhances the diffusion of Sb spikes located between the surface and loop band. By extracting the diffusivity in the Sb spikes on either side of the loop band, we conclude that over 90&percent; of the injected vacancies are captured by the loops. ©1998 American Institute of Physics.