Metallic ion implantation by using a MEVVA ion source
作者:
Ji. Chengzhou,
Zhang Tonghe,
Zhang Huixing,
Xie Jindong,
Wang Anmin,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 129,
issue 3-4
页码: 161-172
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408229015
出版商: Taylor & Francis Group
关键词: Metallic ions;ion implantation in metals;high-dose implantation
数据来源: Taylor
摘要:
Metallic ions (Ti, Mo, W, V, Ni, Y, Fe and Al) extracted from a MEVVA source have been implanted up to high doses (>1 × 1017cm−2) into Al and H13 steel. Because of beam heating, rather low energy ions could penetrate quite deeper in the substrates than predicted, stable intermetallic compounds appear as fine precipitates in the doped region, and hence the retained concentration of implants even exceeds the sputter-limited maximum. Multiply charged beam, enhanced diffusion and chemical reaction give great influences to the concentration distribution of implants. All these features are strongly dependent on the chosen ion-target combination.
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